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| ISSUED DATE :2005/01/13 REVISED DATE : GISD1802 Description Features *Adoption of FBET, MBIT processes NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 : , unless otherwise specified) Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 : unless otherwise specified) Max. 1 1 0.5 1.2 560 MHZ ns ns ns pF Unit V V V A A V V IC=10uA, IE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.1A IC=2A, IB=0.1A VCE=2V, IC=0.1A VCE=2V, IC=3A VCE=10V,IC=50mA See test circuit See test circuit See test circuit VCB=10V, f=1MHz Test Conditions Ratings +150 -55 ~ +150 60 50 6 3 6 1 20 V V V A A W W Unit Electrical Characteristics (Ta = 25 : Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf Cob Min. 60 50 6 100 35 Typ. 0.19 0.94 150 70 650 35 25 GISD1802 Page: 1/3 ISSUED DATE :2005/01/13 REVISED DATE : Classification Of hFE1 Rank Range R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 U 280 ~ 560 Switching Time Test Circuit Characteristics Curve GISD1802 Page: 2/3 ISSUED DATE :2005/01/13 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GISD1802 Page: 3/3 |
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